Recently, a research team at King Abdullah University of Science and Technology (KAUST) in Saudi Arabia has developed a nano-scale luminescent device called AlGaN. The researchers have made the nanoscale GRINSCH dipole by using the gradient refractive index distribution (GRINSCH) device to make the nanoscale dipole. The researchers expect to be able to apply it to the UV LED device in the future, such as laser, optical sensor, amplitude modulator, and the optical related devices of the product.

现有AlGaN发光装置，被视为是取代现有UV气体激光和含有有毒物质的UV灯的UV灯源。不过由于装置中的UV激光二极体，电压至少要25伏特才能操作，加上电洞注入层效率不佳，导致串联电阻高，导致性能受限。其中原因和AlGaN铝层的P型半导体涂层以及缺少有效的散热管道等有关。

The existing AlGaN light emitting device is regarded as the UV lamp source to replace the existing UV gas laser and the UV lamp containing toxic substances. However, due to the UV laser diode in the device, the voltage is at least 25 volts, and the efficiency of the injection layer is not good, which leads to high series resistance, which leads to limited performance. The reason is related to the P type semiconductor coating on the AlGaN aluminum layer and the lack of effective cooling pipes.

奈米级AlGaN和原先AlGaN磊晶薄膜层相比，由于表面积对体积比高，形成有效的应力松弛，能直接在包括金属等基质上延展。金属和以矽或蓝宝石包复的金属基质，能在高电流操作过程，提供更好的散热管道。另外，奈米级P型半导体因为加入了镁，活化能需求低，因此电阻也相对较小。经过研究团队实验证实，GRINSCH二极体在电子和光学表现上出色，所需电压和串联电阻也比原先的二极体要低。

Compared with the original AlGaN epitaxial thin film layer, the nanocrystalline AlGaN has an effective stress relaxation due to the high surface area to the volume ratio, which can be extended directly on the matrix including the metal. Metal and metal matrix coated with silicon or sapphire can provide a better heat sink for high current operation. In addition, because of the low demand for the activation energy of nanoscale P semiconductor because of the addition of magnesium, the resistance is relatively small. The GRINSCH diode has excellent electronic and optical performance, and requires lower voltage and series resistance than the original diode.