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TES MOCVD HESTIA-2G
TES MOCVD HESTIA-2G
Part Name：TES MOCVD HESTIA-2G
Part No：TES MOCVD HESTIA-2G
Wavelength：
IOP：
Optical Power：
Part Package：
APPLICATION
- DUV LED epitaxy growth - High quality AlN & AlGaN growth
SPECIFICATION
SPECIFICATION： No results were found.
PRODUCT DETAILS
Applications - DUV LED epitaxy growth - High quality AlN & AlGaN growth Features - Reactor Type: Horizontal - Heating Type: RF induction - Max Temp.: 1600 °C - Wafer loading Capacity: 3x2 inch or 1x4 inch
