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Contact Person :James
QL83O6S-A/B/C
Part Name：QL83O6S-A/B/C 830nm 100mW Semiconductor laser diod
Part No：QL83O6S-A/B/C
Wavelength：830nm
IOP：185mA
Optical Power：100mW
Part Package：TO-18 (φ5.6mm)
- sensors - industrial light module - 3D action recognition
SPECIFICATION： Know
♦OVERVIEW
QL83O6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 100mW for industrial optical module
and sensor applications.
♦APPLICATION
- Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Power Output : 100mW CW
- Package Type : TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
