- ◆ material
- ALN TEMPLATE
- GAN TEMPLATE
- ◆ Epitaxial wafer
- 硅基2'' 4'' 6'' LED外延
- AlGan基 2'' 4'' LED外延
- ◆ LED/CHIP
- 3535 UVCLED
- 4545UVCLED
- 3535 UVBLED
- 4545UVBLED
- VCSEL/EEL芯片
- SMD贴片
- ◆ Laser
- 635nm
- 650nm
- 395nm
- 670nm
- 680nm
- 780nm
- 808nm
- 850nm
- 830nm
- 905nm
- ◆ Sharp Laser series
- 385nm
- 395nm
- 405nm
- 425nm
- 395-414nm
- 430-450nm
- 435nm
- 440nm
- 450nm
- 480nm
- 487nm
- 505nm
- 515nm
- 518nm
- 520nm
- 525nm
- 638nm
- 639nm
- 640nm
- 660nm
- 661nm
- 780nm
- ◆ OSRAM laser series
- 405nm
- 445nm
- 450nm
- 510nm
- 520nm
- ◆ Device
- TES MOCVD
- 一秒光杀菌产品
- 点光源
- 面光源
Address：7th Floor, Gaofeng Building, Dalang Street, Longhua District, Shenzhen
Website：www.longstartech.com.cn
TEL：0755-2556 9680
FAX：0755-2556 6650
Mobile：13316929948（同V）
Email：James@longstartech.com.cn
Contact Person :James
QL83R6S-A/B/C/L
Part Name：QL83R6S-A/B/C/L 830nm 200mW
Part No：QL83R6S-A/B/C/L
Wavelength：830nm
IOP：230mA
Optical Power：200mW
Part Package：TO-18 (φ5.6mm)
Motion recognition sensor - industrial light module
SPECIFICATION： Know
¨OVERVIEW
QL83R6S-A/B/C/L is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 200mW for industrial optical module
and sensor applications.
¨APPLICATION
- Motion Recognition Sensor
- Industrial Optical Module
¨FEATURES
- Visible Light Output : lp = 830 nm
- Optical Power Output : 200mW CW
- Package Type : TO-18 (5.6mmf)
- Built-in Photo Diode for Monitoring Laser Diode
